Ferroelectric dielectric for integrated circuit applications at

Details Ferroelectric dielectric for integrated circuit applications at Ferroelectric dielectric for integrated circuit applications at

1997-03-10

1999-03-23

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613211, 3613215, 257295, H01G 406, H01L 2976

Patent

active

058868674

ABSTRACT:
A ferroelectric dielectric for microwave applications is provided including a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapour, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material including lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.

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