Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1999-06-17
2000-11-14
Tsai, Jey
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
H01G 706
Patent
active
06146905&
ABSTRACT:
A ferroelectric dielectric for microwave applications is provided comprising a polycrystalline perovskite phase of lead zirconate titanate dielectric material. Small grain size material is provided by a low temperature process, by a rapid thermal annealing process. A layer of amorphous ferroelectric precursor material is deposited and annealed in an oxygen containing atmosphere in the presence of water vapor, preferably with the addition of a few percent of ozone, and at a temperature of less than 500.degree. C. Advantageously, the method provides for formation of a ferroelectric material comprising lead zirconate titanate with a grain size less than 20 nm, with low film stress, high dielectric constant and low leakage current, which has excellent ferroelectric characteristics up to 10 GHz. This material has applications for capacitors, as filters, decoupling, coupling, and bypass elements and also for high frequency surface acoustic wave devices.
REFERENCES:
patent: 5607631 (1997-03-01), Wolfson et al.
patent: 5721194 (1998-02-01), Yandrofski et al.
patent: 5728603 (1998-03-01), Emesh et al.
Chivukula Vasanta
Leung Pak K.
de Wilton Angela C.
Nortell Networks Limited
Tsai Jey
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