Ferroelectric capacitor with dielectric lining,...

Details Ferroelectric capacitor with dielectric lining,... Ferroelectric capacitor with dielectric lining,...

2005-08-30

2005-08-30

Wilson, Allan R. (Department: 2815)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S239000, C438S386000, C438S399000, C257S296000, C257S295000, C257S298000

Reexamination Certificate

active

06936478

ABSTRACT:
A ferroelectric capacitor has a top electrode, a bottom electrode, a ferroelectric body disposed between the top and bottom electrodes, and a dielectric lining disposed below the top electrode and above the bottom electrode, protecting the sides of the ferroelectric body. The ferroelectric body can be formed by chemical-mechanical polishing of a ferroelectric film. In a memory device, the capacitor is coupled to a transistor. The dielectric lining protects the ferroelectric body from etching damage during the fabrication process, obviating the need for repeated annealing to repair such damage, thereby avoiding the alteration of transistor characteristics that would be caused by such annealing.

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T. Kachi et al., “A Scalable Single-transistor/single-capacitor Memory Cell Structure Characterized by an Angled-capacitor Layout For Megabit FeRAMs”, 1998 IEEE.

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