Ferroelectric capacitor test structure for chip die

Details Ferroelectric capacitor test structure for chip die Ferroelectric capacitor test structure for chip die

1992-04-15

1993-10-19

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437170, 437919, G01R 3126, H01L 2166

Patent

active

052544826

ABSTRACT:
A test structure integrated into substantially each circuit die formed on a wafer. The test structure includes a ferroelectric component connected to bond pads of the die so that analog tests can be conducted thereon, and the results of the tests utilized to extrapolate aging and fatigue characteristics of other ferroelectric components in the functional circuits of the die. The ferroelectric test structure can be connected directly to die bond pads, or switchably connected thereto by decoding circuits which share bond pads employed by the other functional circuits of the die.

REFERENCES:
patent: 4259728 (1981-03-01), Geary et al.
patent: 4319355 (1982-03-01), Mollier
patent: 4419747 (1983-12-01), Jordan
patent: 4437229 (1984-03-01), Bitler et al.
patent: 4451903 (1984-05-01), Jordan
patent: 4532607 (1985-07-01), Uchida
patent: 4550289 (1985-10-01), Kabashima et al.
patent: 4800418 (1989-01-01), Natsui
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4972372 (1990-11-01), Ueno
patent: 5038323 (1991-08-01), Schwee
patent: 5046043 (1991-09-01), Miller et al.
patent: 5060191 (1991-10-01), Wagasaki et al.
patent: 5072417 (1991-12-01), Aton et al.
VLSI On-Chip Test as a Lower Tier of Built-in Test, Frank J. Langley, Proceedings ATE West, 1985.
Requirements and Interim Solutions for High-Speed Testing of GaAs ICs, Tushar R. Gheewala, IEEE GaAs IC Symposium, 1985.
Survey of High Speed Test Techniques, Tushar Gheewala, SPIE vol. 795 Characterization of Very High Speed Semiconductor Devices & Integrated Circuits, 1987.
(untitled) IEEE Journal of Solid-State Circuits, vol. SC-18, No. 5, Oct., 1980.
Haist et al., IBM Technical Disclosure Bulletin, V. 19, No. 3 (Aug. 1976), p. 964.

Affiliated with

Also associated with

Rating

Ferroelectric capacitor test structure for chip die does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric capacitor test structure for chip die, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric capacitor test structure for chip die will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1351193