Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-07-24
2007-07-24
Coleman, William David (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21664
Reexamination Certificate
active
11024873
ABSTRACT:
A ferroelectric capacitor includes a pair of electrodes, and at least one ferroelectric held between the pair of electrodes, in which the ferroelectric includes a first ferroelectric layer having a surface roughness (RMS) determined with an atomic force microscope of 10 nm or more; and a second ferroelectric layer being arranged adjacent to the first ferroelectric layer and having an RMS of 5 nm or less. A process produces such a ferroelectric capacitor by forming a first ferroelectric layer on or above one of a pair of electrodes at a temperature equal to or higher than a crystallization temperature at which the first ferroelectric layer takes on a ferroelectric crystalline structure, and forming a second ferroelectric layer on the first ferroelectric layer at a temperature lower than a crystallization temperature at which the second ferroelectric layer takes on a ferroelectric crystalline structure.
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Maruyama Kenji
Matsuura Osamu
Takai Kazuaki
Coleman William David
Fujitsu Limited
Westerman, Hattori, Daniels & Adrian , LLP.
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