Ferroelectric capacitor, method of manufacturing the same,...

Details Ferroelectric capacitor, method of manufacturing the same,... Ferroelectric capacitor, method of manufacturing the same,...

2006-05-02

2006-05-02

Wilson, Christian D. (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

Reexamination Certificate

active

07037731

ABSTRACT:
A method of manufacturing a ferroelectric capacitor. In this method, a lower electrode is formed on a base at first. A ferroelectric film which includes a PZTN complex oxide including lead, zirconium, titanium, and niobium on the lower electrode is formed, and then an upper electrode is formed on the ferroelectric film. A protective film is then formed to cover the lower electrode, the ferroelectric film, and the upper electrode, and heat treatment for crystallizing the PZTN complex oxide is performed at least after forming the protective film.

REFERENCES:
patent: 6566261 (2003-05-01), Ikegami et al.
patent: 6635497 (2003-10-01), Aggarwal et al.
patent: 2004/0214352 (2004-10-01), Kijima et al.

Affiliated with

Also associated with

Rating

Ferroelectric capacitor, method of manufacturing the same,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric capacitor, method of manufacturing the same,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric capacitor, method of manufacturing the same,... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3536137