Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-05-24
2010-12-07
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S535000, C257SE27048, C257SE21664
Reexamination Certificate
active
07847372
ABSTRACT:
A ferroelectric capacitor including: a substrate; a first electrode formed above the substrate; a first ferroelectric layer formed above the first electrode and including a complex oxide shown by Pb(Zr,Ti)O3; a second ferroelectric layer formed above the first ferroelectric layer and including a complex oxide shown by Pb(Zr,Ti)1-xNbxO3; and a second electrode formed above the second ferroelectric layer.
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Harness & Dickey & Pierce P.L.C.
Ngo Ngan
Seiko Epson Corporation
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