Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-07-26
2011-07-26
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257S295000
Reexamination Certificate
active
07985603
ABSTRACT:
A method of manufacturing a semiconductor device. The method comprises forming conductive and ferroelectric material layers on a semiconductor substrate. The material layers are patterned to form electrodes and a ferroelectric layer of a ferroelectric capacitor, wherein a conductive residue is generated on sidewalls of the ferroelectric capacitor as a by-product of the patterning. The method also comprises removing the conductive residue using a physical plasma etch clean-up process that includes maintaining a substrate temperature that is greater than about 60° C.
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Celii Francis Gabriel
Kraft Robert
Moise Theodore S.
Summerfelt Scott Robert
Udayakumar Kezhakkedath R.
Brady III Wade J.
Keagy Rose Alyssa
Lee Calvin
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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