Ferroelectric capacitor heterostructure and method of making sam

Details Ferroelectric capacitor heterostructure and method of making sam Ferroelectric capacitor heterostructure and method of making sam

1994-10-05

1995-12-26

Ledynh, Bot L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, H01G 406

Patent

active

054793173

ABSTRACT:
A ferroelectric capacitor heterostructure useful in fabricating high-density, non-volatile memory devices is improved by the interposition of an epitaxially-grown layer of oriented platinum which provides the level of electrical conductivity necessary for incorporation of such devices into integrated circuit structures. The reliability of the ferroelectric capacitor device is further improved by maintaining appropriate oxygenation during the fabrication process to ensure the symmetry of the ferroelectric hysteresis loop and thereby provide optimum control of such significant properties as aging, retention, imprint, and fatigue.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5155658 (1992-10-01), Inam et al.
patent: 5169485 (1992-12-01), Allen et al.
patent: 5248564 (1993-09-01), Ramesh
patent: 5270298 (1993-12-01), Ramesh

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