Ferroelectric capacitor having upper electrode lamination...

Details Ferroelectric capacitor having upper electrode lamination... Ferroelectric capacitor having upper electrode lamination...

2005-05-10

2005-05-10

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257S295000

Reexamination Certificate

active

06890769

ABSTRACT:
A ferroelectric capacitor adapted for a non-volatile semiconductor memory comprises a base substrate with an insulating surface, such as a semiconductor substrate formed with semiconductor elements and having a top insulator film, a lower electrode formed on the insulating surface, an oxide ferroelectric layer formed on the lower electrode, a first oxide upper electrode formed on and in contact with the upper surface of the oxide ferroelectric layer, and a second oxide upper electrode formed on the first oxide upper electrode, wherein one of the first and second oxide upper electrodes compromises SRO that contains at least 0.1 at % additive and the other of the first and second oxide upper electrodes comprises IrOx. A non-volatile semiconductor memory or ferroelectric capacitor, having a PZT ferroelectric layer, excellent in characteristics, and capable of being manufactured efficiently, is provided.

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