Ferroelectric capacitor having a substantially planar...

Details Ferroelectric capacitor having a substantially planar... Ferroelectric capacitor having a substantially planar...

2006-12-26

2006-12-26

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S633000

Reexamination Certificate

active

07153706

ABSTRACT:
The present invention provides a ferroelectric capacitor, a method of manufacture therefor, and a method of manufacturing a ferroelectric random access memory (FeRAM) device. The ferroelectric capacitor (100), among other elements, includes a substantially planar ferroelectric dielectric layer (165) located over a first electrode layer (160), wherein the substantially planar ferroelectric dielectric layer (165) has an average surface roughness of less than about4nm. The ferroelectric capacitor (100) further includes a second electrode layer (170) located over the substantially planar ferroelectric dielectric layer (165).

REFERENCES:
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patent: 6239457 (2001-05-01), Suenaga et al.
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patent: 6635528 (2003-10-01), Gilbert et al.
patent: 2001/0044205 (2001-11-01), Gilbert et al.
patent: 2002/0003123 (2002-01-01), Lee et al.

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