Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-10-10
2006-10-10
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S253000, C438S722000
Reexamination Certificate
active
07119021
ABSTRACT:
A ferroelectric capacitor in which damage caused by etching exposed faces of a ferroelectric layer of the capacitor is compensated by depositing a seeding layer of ferroelectric material such as PZT on one or more exposed faces of the ferroelectric layer and depositing an electrode layer made of conductive material such as platinum on the seeding layer. An oxygen annealing recovery process is applied to the device. The seeding layer can transform the phase of the damaged surfaces from amorphous to crystalline during the recovery annealing process and, at the same time, provide the damaged surfaces of the ferroelectric layer with missing element(s), for example lead. The oxygen necessary for recovery of the damage may be obtained through the platinum layer from the oxygen atmosphere.
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Chen Kin-Chan
Infineon - Technologies AG
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