Ferroelectric capacitor and manufacturing the same using bismuth

Details Ferroelectric capacitor and manufacturing the same using bismuth Ferroelectric capacitor and manufacturing the same using bismuth

1996-09-06

1999-12-21

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117945, C30B 2502

Patent

active

06004392&

ABSTRACT:
Described are a stable semiconductor memory device which is not susceptible to the influence of a heat treatment temperature of a semiconductor substrate of reaction pressure in the CVD method and is free from the reduction in remanence caused by data writing in repetition; and a fabrication process of such a device which comprises forming, by the CVD method, a ferroelectric film containing as a component element bismuth, suing a bismuth alkoxide compound as a raw material, and using the ferroelectric film as a film for the formation of storage capacitance for a semiconductor memory device.

Affiliated with

Also associated with

Rating

Ferroelectric capacitor and manufacturing the same using bismuth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric capacitor and manufacturing the same using bismuth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric capacitor and manufacturing the same using bismuth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-501306