Ferroelectric capacitor and a semiconductor device having the sa

Details Ferroelectric capacitor and a semiconductor device having the sa Ferroelectric capacitor and a semiconductor device having the sa

1990-12-24

1992-10-13

Carroll, J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 236, 357 55, 365145, H01L 2928, H01L 2702, H01L 2906, H01L 2968

Patent

active

051555735

ABSTRACT:
A ferroelectric capacitor includes a ferroelectric layer consisting of lead zirconate titanate formed on a silicon substrate, a plurality of rectangular trenches formed in the direction of thickness of the ferroelectric layer with a ferroelectric material therebetween, and first and second electrodes consisting of metal tungsten buried in the trenches to oppose each other with the ferroelectric material therebetween.

REFERENCES:
patent: 3569795 (1969-05-01), Gikow
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 4967247 (1990-10-01), Kaga et al.
patent: 5021843 (1991-06-01), Ohmi
patent: 5031144 (1991-07-01), Persky
Hideaki Adachi et al., Ferroelectric (Pb,La) (Zr,Ti)O.sub.3 Epitaxial Thin Films on Sapphire Grown by RF-Planar Magnetron Sputtering, J. Appl. Phys., 60(2), Jul. 15, 1986, American Institute of Physics, pp. 736-741.
Tatsuo Fukami et al., Asymmetric Hysteresis Loops of Ferroelectric PZT Film, Jpn. J. Appl. Phys., vol. 24, (1985), No. 5, pp. 632-633.
Digest of 1989 IEEE International Solid-State Conference, FAM 16.3, R. Womack et al.; Feb. 17, 1989, pp. 242-243.
Digest of 1989 IEEE International Solid-State Conference, FAM 16.3; R. Womack et al.; Feb. 17, 1989; "A 16kb Ferroelectric Nonvolatile Memory with a Bit Parallel Architecture", pp. 242-243.

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