Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2006-07-11
2006-07-11
Ha, Nguyen T. (Department: 2831)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S311000, C361S313000, C361S306100, C361S306300, C361S321100, C257S294000, C257S295000
Reexamination Certificate
active
07075773
ABSTRACT:
It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelectricity. A silicon oxide layer2, a lower electrode12, a ferroelectric layer8and an upper electrode10are formed on a silicon substrate2. The lower electrode12is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode12can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer8.
REFERENCES:
patent: 4982309 (1991-01-01), Shepherd
patent: 5003428 (1991-03-01), Shepherd
patent: 5005102 (1991-04-01), Larson
patent: 5030331 (1991-07-01), Sato
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5240906 (1993-08-01), Bednorz et al.
patent: 5293510 (1994-03-01), Takenaka
patent: 5294317 (1994-03-01), Saito et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5343353 (1994-08-01), Miki et al.
patent: 5359217 (1994-10-01), Murai
patent: 5407855 (1995-04-01), Maniar et al.
patent: 5431958 (1995-07-01), Desu et al.
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5489548 (1996-02-01), Nishioka et al.
patent: 5491102 (1996-02-01), Desu et al.
patent: 5555486 (1996-09-01), Kingon et al.
patent: 5566045 (1996-10-01), Summerfelt et al.
patent: 5573979 (1996-11-01), Tsu et al.
patent: 5581436 (1996-12-01), Summerfelt et al.
patent: 5612574 (1997-03-01), Summerfelt et al.
patent: 5638319 (1997-06-01), Onishi et al.
patent: 5708284 (1998-01-01), Onishi
patent: 5834357 (1998-11-01), Kang
patent: 5874364 (1999-02-01), Nakatayashi et al.
patent: 5879957 (1999-03-01), Joo
patent: 6052271 (2000-04-01), Nakamura
patent: 6239462 (2001-05-01), Nakao et al.
patent: 6437966 (2002-08-01), Nakamura
patent: 0 567 878 (1993-11-01), None
patent: 56-147465 (1981-11-01), None
patent: 5-160455 (1993-06-01), None
Metallic Material Dictionary, pp. 140-141, 1966.
Fundamental Metallic Material, pp. 20-21, 1979.
B. Jiang, et al., “A New Electrode Technology for High-Density Nonvolatile Ferroelectric (SrBi2Ti2O9) Memories”, IEEE 1996, pp. 26-27.
T. Nakamura et, al., “Electrical Properties of PZT Thin Film with Ir and IrO2 Electrodes”, IEE 1995, pp. 547-550.
Hamre, Schumann, Muellar & Larson, P.C.
Rohm & Co., Ltd.
LandOfFree
Ferroelectric capacitor and a method for manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric capacitor and a method for manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric capacitor and a method for manufacturing thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3583251