Fermi threshold field effect transistor with reduced gate and di

Details Fermi threshold field effect transistor with reduced gate and di Fermi threshold field effect transistor with reduced gate and di

1992-01-28

1993-03-16

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257327, H01L 2978

Patent

active

051949237

ABSTRACT:
An improved Fermi FET structure with low gate and diffusion capacity allows conduction carriers to flow within the channel at a predetermined depth in the substrate below the gate, without requiring an inversion layer to be created at the surface of the semiconductor. The low capacity Fermi FET is preferably implemented using a Fermi Tub having a predetermined depth, and with a conductivity type opposite the substrate conductivity type and the same conductivity type as the drain and source diffusions.

REFERENCES:
patent: 4819043 (1989-04-01), Yazawa et al.
patent: 4984043 (1991-01-01), Vinal
patent: 4990974 (1991-02-01), Vinal

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