Static information storage and retrieval – Interconnection arrangements – Ferroelectric
Reexamination Certificate
2006-05-23
2006-05-23
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Interconnection arrangements
Ferroelectric
C365S145000, C365S191000, C365S207000, C365S230030, C365S230060
Reexamination Certificate
active
07050321
ABSTRACT:
The nonvolatile ferroelectric memory device having a cell array structure including sub-bitlines and main bitlines wherein a sensing voltage of sub-bitlines is transformed into a current to induce a sensing voltage of main bitlines, comprising: a plurality of cell array blocks comprising the cell array; a cell array block driver for transmitting driving signals which drive the cell array blocks into the cell array blocks; a control circuit unit for symmetrically dividing the cell array blocks and controlling data to be written in or read from the cell array blocks; and a plurality of data buses shared in the main bitlines by using switching devices and arranged vertically in both sides of the control circuit unit, wherein a layer where the driving signals lines for transmitting the driving signals into the cell array blocks are formed is positioned above a layer where the cell arrays are formed. The multi-layer structure can reduce the layout area of chips because the repeated used driving signal lines are formed above the cell arrays.
REFERENCES:
patent: 5448516 (1995-09-01), Tsukikawa et al.
patent: 5499215 (1996-03-01), Hatta
patent: 5629898 (1997-05-01), Idei et al.
patent: 5930195 (1999-07-01), Komatsu
patent: 5953261 (1999-09-01), Furutani et al.
patent: 5970003 (1999-10-01), Miyatake et al.
patent: RE36490 (2000-01-01), Hwang et al.
patent: 6064621 (2000-05-01), Tanizaki et al.
patent: 6094382 (2000-07-01), Choi et al.
patent: 6108264 (2000-08-01), Takahashi et al.
patent: 6147925 (2000-11-01), Tomishima et al.
patent: 6150728 (2000-11-01), Tsukude et al.
patent: 6154399 (2000-11-01), Ogishima
patent: 6310815 (2001-10-01), Yamagata et al.
patent: 6317355 (2001-11-01), Kang
patent: 6363451 (2002-03-01), Kim
patent: 6621744 (2003-09-01), Kojima
patent: 6636110 (2003-10-01), Ooishi et al.
patent: 6714433 (2004-03-01), Doblar et al.
patent: 2002/0149990 (2002-10-01), Lee
patent: 2002/0167853 (2002-11-01), Kojima
patent: 2003/0031058 (2003-02-01), Kajigaya et al.
patent: 2004/0047229 (2004-03-01), Fujisawa et al.
patent: 2004/0062134 (2004-04-01), Kato et al.
patent: 2004/0140485 (2004-07-01), Matsuzaki et al.
patent: 2001-27117 (2001-04-01), None
patent: 2001-27713 (2001-04-01), None
Hynix / Semiconductor Inc.
Jacobson & Holman PLLC
Pham Ly Duy
Zarabian Amir
LandOfFree
FeRAM having new signal line structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with FeRAM having new signal line structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and FeRAM having new signal line structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3560454