Fence-free etching of iridium barrier having a steep taper...

Details Fence-free etching of iridium barrier having a steep taper... Fence-free etching of iridium barrier having a steep taper...

2006-03-21

2006-03-21

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S695000, C438S734000

Reexamination Certificate

active

07015049

ABSTRACT:
An Iridium barrier layer is between a contact plug and a bottom electrode of a capacitor. Etching is performed to pattern the bottom electrode and barrier layer using a fluorine-based recipe resulting in the formation of a first fence clinging to the sidewalls. Next the remaining barrier layer is etched using a CO-based recipe. A second fence is formed clinging to and structurally supported by the first fence. At the same time, the CO-based recipe etches away a substantial portion of the first fence to remove the structural support provided to the second fence. The second fence is therefore lifted-off from the sidewalls leaving the sidewalls substantially free of clinging fences. The etched barrier layer has a sidewall transition. The sidewalls have a relatively low taper angle above the sidewall transition and a relatively steep taper angle below the sidewall transition.

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International Search Report, mailing date Dec. 01, 2004.

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