Feedthrough design and method for a hermetically sealed...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C438S108000, C438S111000, C438S113000, C438S125000, C438S109000, C257S659000, C257S660000, C257S704000, C257S682000

Reexamination Certificate

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06929974

ABSTRACT:
A microdevice (20, 120, 220) having a hermetically sealed cavity (22, 122, 222) to house a microstructure (26, 126, 226). In one embodiment, the microdevice (20) comprises a substrate (30), a cap (50) and an isolation layer (70). The substrate (30) has a plurality of conductive traces (38) formed on at least a portion of its top side (32) and outer edge (36). The conductive traces (38) provide electrical conductivity to the microstructure (26). The isolation layer (70) is attached between an outer edge of a sidewall (54) of the cap (50) and the plurality of conductive traces (38). The cavity (22) is at least partially defined by a recess (56) in the cap (50). There is also a microdevice (120) comprising a substrate (130), a cap (150) and a plurality of via covers (170). The substrate (130) has conductive vias (196) that terminate at a contact point (146) within the sealed cavity (122). The via covers (170) are attached to the substrate (130) to provide a hermetic seal. There is a further microdevice (220) comprising a substrate (230), a cap (250), and a plurality of conductive members (270). The cap (250) has conductive vias (296) that terminate at the conductive members (270). The conductive members (270) are electrically connected to the microstructure (226). There are also methods of forming the microdevice (20, 120, 220).

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