Feedstock arrangement for silicon carbide boule growth

Details Feedstock arrangement for silicon carbide boule growth Feedstock arrangement for silicon carbide boule growth

1997-05-08

1998-08-04

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117 4, 117 84, C30B 3500

Patent

active

057887683

ABSTRACT:
A silicon carbide feedstock charge for growing silicon carbide boules in a physical vapor transport system. The feedstock charge includes silicon carbide particles, as well as any dopant material, if required, in a structure which is rigid and self supportable. An elongated feedstock charge may be moved toward the seed crystal as the feedstock is depleted during boule growth. The feedstock charge may be tailored to provide a non-uniform flux for growing more planar boule faces.

REFERENCES:
patent: 4866005 (1989-09-01), Davis et al.
patent: 4869776 (1989-09-01), Kitagawa et al.
patent: 5683507 (1997-11-01), Barrett et al.
"Meeting device needs through melt growth of semiconductors;" R.N. Thomas, et al; Journal of Crystal Growth 99 (1990), pp. 643-653.

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