Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-03-26
1998-05-05
Popek, Joseph A.
Static information storage and retrieval
Floating gate
Particular biasing
365207, 327 54, G11C 1134
Patent
active
057485348
ABSTRACT:
To read the threshold voltage of a transistor such as a floating gate transistor in an analog or multi-level memory cell, the transistor is connected in a feedback loop which contains a differential amplifier having an output terminal and an input terminal respectively connected to the gate and a node (source or drain) of the transistor. A reference voltage is asserted to a second input terminal of the differential amplifier. A load provides a current which charges the node, and the differential amplifier adjusts the gate voltage of the memory cell to an equilibrium value where current through the transistor is equal to current through the reference cell. The equilibrium value of the gate voltage depends on and indicates the threshold voltage of the transistor. In one embodiment of the invention, the load is a current source which mirrors a current through a reference cell that is structurally identical to the transistor, and the drain of the reference cell provides the reference voltage to the amplifier.
REFERENCES:
patent: 5339272 (1994-08-01), Tedrow et al.
Dunlap Frank M.
So Hock C.
Wong Sau C.
Ho Hoai
Invox Technology
Millers David T.
Popek Joseph A.
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