Feedback circuit for output control in a semiconductor X-ray...

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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C250S370010

Reexamination Certificate

active

07554091

ABSTRACT:
An X-ray detector using a semiconductor detector, most preferably a Silicon Drift Detector, utilizes a field effect transistor or other voltage-controlled resistance to generate an output voltage proportional to its input charge (which is generated by the X-ray photons incident on the semiconductor detector). To keep the charge (and thus the output voltage) to an acceptable range—one wherein the relationship between output voltage and input charge is substantially proportional—a feedback circuit is provided between the output and input terminals, wherein the charge on the input terminal is depleted when the output voltage begins leaving the desired range. Preferably, this is done by a comparator which monitors the output voltage, and provides a reset signal to the input terminal when it begins moving out of range. Alternatively or additionally, the reset signal may be a pulse supplied to the input terminal from a pulse generator activated by the comparator.

REFERENCES:
patent: 7339175 (2008-03-01), Drummond et al.
patent: 2006/0086906 (2006-04-01), Kiuru
C. Fiorini, T. Frizzi, and A. Longoni. “A CMOS Charge Preamplifier for Silicon Drift Detectors in with On-chip JFET and Feedback Capacitor”. Nuclear Instruments and Methods in Physics Research A: 568 (2006), 322-328.
Lechner, P., S. Eckbauer, R. Hartmann, S. Krisch, D. Hauff, R. Richter, H. Soltau, L. Struder, C. Fiorini, E. Gatti, A. Longoni, and M. Sampietro. “Silicon Drift Detectors for High Resolution Room Temperature X-ray Spectroscopy.” Nuclear Instruments and Methods in Physics Research A: 377(1996), 346-351.

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