Feature patterning methods

Details Feature patterning methods Feature patterning methods

2008-05-27

2009-10-06

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

C438S620000, C438S622000, C438S637000, C438S700000, C257SE21579

Reexamination Certificate

active

07598174

ABSTRACT:
Methods of patterning features, methods of patterning material layers of semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a method of patterning features includes providing a workpiece having a material layer disposed thereon. A hard mask is formed over the material layer. A first pattern is formed in an upper portion of the hard mask, and a second pattern is formed in the upper portion of the hard mask. The first pattern and the second pattern are formed in a lower portion of the hard mask and the material layer, forming the features in the material layer.

REFERENCES:
patent: 6479860 (2002-11-01), Ohbayashi
patent: 6743711 (2004-06-01), Kim
patent: 6767825 (2004-07-01), Wu
patent: 6787469 (2004-09-01), Houston et al.
patent: 6942958 (2005-09-01), Chen et al.
patent: 2008/0286698 (2008-11-01), Zhuang et al.
patent: 2008/0305623 (2008-12-01), Zhuang et al.
Zhuang, H., et al., “Patterning Strategies for Gate Level Tip-Tip Distance Reduction in SRAM Cell for 45nm and Beyond,” International Semiconductor Technology Conference (ISTC) 2007, Mar. 18-20, 2007, 2 pp., Electrochemical Society, Inc., Shanghai, China.

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