Feature for a semiconductor device to reduce mobile ion contamin

Details Feature for a semiconductor device to reduce mobile ion contamin Feature for a semiconductor device to reduce mobile ion contamin

1992-10-27

1994-04-26

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With peripheral feature due to separation of smaller...

257306, 257770, 257297, H01L 2934

Patent

active

053069455

ABSTRACT:
A barrier for terminating the edge of a semiconductor die such as a dynamic random access memory device is disclosed. The barrier reduces contamination of the dielectric layers such as TEOS and BPSG from mobile ions which are inherent in fabrication materials. While the barrier can be formed at many points in the die fabrication process, its formation is preferably incorporated into the Metal1 mask, thereby preventing the need for an additional mask step. The barrier, if formed with the Metal1 mask, would therefore be formed from the material of the Metal1, conventionally tungsten, a tungsten alloy, or other metals.

REFERENCES:
patent: 4364078 (1982-12-01), Smith et al.
patent: 4753709 (1988-06-01), Welch et al.
patent: 4841354 (1989-06-01), Inaba
patent: 5016081 (1991-05-01), Brown et al.
patent: 5218219 (1993-06-01), Ajika et al.

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