Fe Ion implantation into semiconductor substrate for reduced lif

Details Fe Ion implantation into semiconductor substrate for reduced lif Fe Ion implantation into semiconductor substrate for reduced lif

1978-08-23

1980-05-20

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 64, 357 91, H01L 21263, H01L 29167

Patent

active

042037808

ABSTRACT:
A method of an iron Fe ion implantation into a semiconductor substrate of an N-type conductivity is disclosed. The method comprises the steps of implanting Fe ions into an N-type semiconductor substrate from its one surface with the dose amount of 10.sup.10 to 10.sup.15 cm.sup.-2 and heat-treating the semiconductor substrate with Fe ions at 850.degree. to 1250.degree. C. to control the lifetime of the minority carrier in the substrate and hence to reduce the temperature dependency of the lifetime.

REFERENCES:
patent: 3502515 (1970-03-01), McMullen et al.
patent: 3988772 (1976-10-01), Krishna
Abdugafurova et al., ". . . Iron-doped Si", Sov. Phys. Semicond., 8 (1975), 1409 (English).
Abdugafurova et al., ". . . Fe-doped P-type Si", Sov. Phys. Semicond., 9 (1975), 450 (English).
Dearnaley et al., (ed.), "Ion Implantation", North-Holland, 1973, pp.462-463.
Chadderton et al., ". . . Cu-Ion Impl. of Si . . .".

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