FBI etching enhanced with 1,2 di-iodo-ethane

Details FBI etching enhanced with 1,2 di-iodo-ethane FBI etching enhanced with 1,2 di-iodo-ethane

1996-12-20

1998-11-24

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438718, 438720, H01L 21302

Patent

active

058406301

ABSTRACT:
A focused ion beam is used to etch material from a specimen while directing a vapor of 1,2 di-iodo-ethane at the surface being etched. The etch rate is accelerated for surfaces of aluminum and gold relative to the etch rate without use of 1,2 di-iodo-ethane.

REFERENCES:
patent: 4226666 (1980-10-01), Winters et al.
patent: 5009743 (1991-04-01), Swann
patent: 5104164 (1992-04-01), Talbot et al.
patent: 5188705 (1993-02-01), Swanson et al.
patent: 5376791 (1994-12-01), Swanson et al.
"Dry Etching of III-V Semiconductors in CH.sub.3 I, C.sub.2 H.sub.5 I, and C.sub.3 H.sub.7 I Discharges"; Chakrabarti et al.; J. Voc. Sci, and Tech, B; vol. 10, No. 6, pp. 2378-2386; Dec. 1992.
"Low Temperature Chemically Assisted Ion-Beam Etching Processes Using C1/2, CH.sub.3 I, and IBr.sub.3 to etch InP Optoelectronic Devices"; J. Voc. Sci. Tech., B (Jun. 1996'), pp. 1780-1783; Eisele et al.; 14(3).
Materials Safety Data Sheet, Epigrade.RTM. EDI10 Source for Etching, NovaMOS Division, Advanced Technology Materials, Inc., dated Mar. 27, 1996, four pages.

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