FBAR, FBAR based duplexer device and manufacturing method...

Details FBAR, FBAR based duplexer device and manufacturing method... FBAR, FBAR based duplexer device and manufacturing method...

2005-11-15

2005-11-15

Summons, Barbara (Department: 2817)

Wave transmission lines and networks

Plural channel systems

Having branched circuits

C333S187000, C333S191000, C333S192000, C333S189000, C438S106000, C438S050000, C438S113000, C257S678000, C257S704000

Reexamination Certificate

active

06965281

ABSTRACT:
Disclosed herein is a film bulk acoustic resonator (FBAR), an FBAR based duplexer device, and a manufacturing method thereof, which a plurality of sacrificial layer units are formed on a substrate wafer so as to be spaced apart from one another at regular distances, and device functional portions are formed on the sacrificial layer units, respectively. The device functional portions have a piezoelectric layer unit and a plurality of electrodes. Then, side wall and roof of protective formed by the use of dry film. After hardening the dry film, the wafer is cut into a plurality of the wafer sections so as to contain the device functional portions, respectively.

REFERENCES:
patent: 5872493 (1999-02-01), Ella
patent: 6377137 (2002-04-01), Ruby
patent: 6407649 (2002-06-01), Tikka et al.
patent: 6509813 (2003-01-01), Ella et al.
patent: 6838956 (2005-01-01), Bradley
patent: 2003-54244 (2003-07-01), None
D. Feld et al., “A Wafer Level Encapsulated FBAR Chip Molded Into A 2.0 mm×1.6 mm Plastic Package for Use As A PCS Full Band Tx Filter”, 2003 IEEE Symposium on Ultrasonics, vol. 2, pp. 1798-1801, Oct. 2003.

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