Fault mode estimating system using abnormal current and V-I char

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371 251, G02R 3128

Patent

active

058897895

ABSTRACT:
In a system for estimating a failure mode in a semiconductor device, at least one special functional test pattern is generated and transmitted to the semiconductor device. If an abnormal current is detected, V-I characteristics of the semiconductor device are detected, and are compared with reference V-I characteristics for a special failure mode, thereby estimating that the specified failure mode has occurred.

REFERENCES:
patent: 5321354 (1994-06-01), Ooshima et al.
M. Sanada, "New Application of Laser Beam to Failure Anhalysis of LSI with Multi-Metal Layers," Microelectron Reliab, vol.33, No. 7, pp, 993-1009, 1993.
M. Sanada, "Evaluation and Detection of MOS-LSI with Abnormal IDDQ," Microelectron Reliab., vol.35, No.3, pp. 619-629, 1995.
H. Ishizuka, et al., "Study of Failure Analysis Using Photon Spectrum," pp. 71-76.

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