Fault isolation within an inner lead bond region of a .mu.BGA (m

Details Fault isolation within an inner lead bond region of a .mu.BGA (m Fault isolation within an inner lead bond region of a .mu.BGA (m

1999-06-25

2000-12-26

Niebling, John F.

Semiconductor device manufacturing: process

With measuring or testing

438106, 29593, G01R 3126, H01L 2166, H01L 2144, H01L 2148, H01L 2150

Patent

active

061658065

ABSTRACT:
The present invention efficiently isolates a fault in an inner lead bond region of a .mu.BGA (micro-Ball Grid Array) package for holding an integrated circuit die, while preserving the structural integrity of areas of the .mu.BGA package outside of the inner lead bond region. The method of the present invention includes a step of immersing the inner lead bond region of the .mu.BGA package into a dissolving bath to dissolve the seal material covering beam leads within the inner lead bond region. The method of the present invention also includes a step of washing the inner lead bond region of the .mu.BGA package in a cleaning bath to remove acid and to remove dissolved seal material from the beam leads within the inner lead bond region. The inner lead bond region is then inspected after the seal material is sufficiently removed from the beam leads within the inner lead bond region to isolate any fault on the beam leads within the inner lead bond region. The present invention may be used to particular advantage for isolating any open circuit faults within the inner lead bond region of the .mu.BGA package when the inner lead bond region of the .mu.BGA package is viewed using SEM (Scanning Electron Microscopy) after the seal material is sufficiently removed from the beam leads within the inner lead bond region.

REFERENCES:
patent: 5764650 (1998-06-01), Debenham
patent: 6025728 (2000-02-01), Hembree et al.
patent: 6033937 (2000-03-01), Manteghi

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