Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1997-04-01
1998-09-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 81, 257 82, 257 99, 257433, 257434, 257680, H01L 2715, H01L 3112, H01L 3300
Patent
active
058083227
ABSTRACT:
The present invention relates to GaAs FET switches for use in microwave test equipment. For many microwave applications, particularly GSM (Global System for Mobile Telecommunications) basestation testing, accurate, reliable switching of microwave signals is desirable. GaAs FET switches are widely used to switch microwave signals in many applications because of their small size and high reliability. However, GaAs FET switches have a significant drawback called the "slow tail" effect. This effect causes the final amplitude of the microwave signal to only be reached gradually after a 10 to 20 millisecond interval. The present invention integrates high intensity LEDs above GaAs IC switches to decrease the absolute magnitude of the slow tail effect, and to shorten its length for faster, more accurate switching.
REFERENCES:
patent: 3043958 (1962-07-01), Diemer
patent: 3370174 (1968-02-01), Toussaint
Gate Slow Transients In GaAs Mesfets-Causes, Cures, and Impact on Circuits R. Yeats, D.C. D'Avanzo, K. Chan, N. Fernandez, T.W. Taylor, and C. Vogel Copywrite 1988 IEEE pp. 842-845-IEDM 88.
Ehlers Eric R.
Nicholson Dean B.
Hewlett--Packard Company
Mintel William
Neville Deborah A.
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