Fast turn-off of thyristor structure

Details Fast turn-off of thyristor structure Fast turn-off of thyristor structure

1990-10-16

1992-02-04

Zazworsky, John

Electrical transmission or interconnection systems

With nonswitching means responsive to external nonelectrical...

Temperature responsive

307633, 307637, 357 38, H03K 1772, H01L 2974

Patent

active

050862421

ABSTRACT:
A fast turn-off thyristor including a first active shunt region in the cathode gate region connected electrically to the anode terminal for shunting carriers around the anode gate region in response to the thyristor being on and a second shunt region in the anode gate region connected electrically to the cathode terminal for shunting carriers around the cathode gate region in response to the thyristor being on. These active shunts are inactive until the thyristor is turned on and are structured to remain active until after the thyristor is turned off. The active shunts are transistors in parallel with the pair of interconnected transistors which are for a PNPN thyristor.

REFERENCES:
patent: 4071779 (1978-01-01), Kawanami
patent: 4315168 (1982-02-01), Ohhinata
patent: 4365170 (1982-12-01), Okuhara
patent: 4635087 (1987-01-01), Birrittella et al.
patent: 4677455 (1987-06-01), Okajima
patent: 4743950 (1988-05-01), Roggwiller
patent: 4786958 (1988-11-01), Bhagat
patent: 4833587 (1989-05-01), Sugayama et al.

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