Fast ternary (GaInAs) logic gate device

Details Fast ternary (GaInAs) logic gate device Fast ternary (GaInAs) logic gate device

1985-07-17

1987-01-27

Edlow, Martin H.

357 232, 357 233, 357 2311, 357 2312, H01L 2978, H01L 2920

Patent

active

046397523

ABSTRACT:
A semiconductor structure GaInAs provides significantly low output capacitance in a digital integrated circuit, such as an inverter. A dopant density (N) within the range of 1.0.times.10.sup.16 cm.sup.-3 and 4.7.times.10.sup.16 cm.sup.-3 and an active layer thickness (a) within the range of 0.15 micrometer and 0.33 micrometer are selected in proper combination to provide a design criterion to provide good device performance with a significantly small propagation delay between the input and output terminals.

REFERENCES:
patent: 4132998 (1979-01-01), Dingwall
patent: 4374391 (1983-02-01), Camlibel et al.
Sze, S. M., Physics of Semiconductor Devices, Wiley & Sons, N.Y., p. 488.
Narayan et al., "Growth . . . Application", RCA Review, vol. 42, Dec. 1981, pp. 492-506.
Dr. M. Fogiel, Modern Microelectronic Circuit Design, IC Applications, Fabrication Technology, vol. 1, Research & Ed. Association, Copyright 1981, pp. 440-442.
P. D. Gardner, et al., "GaInAs Deep Depletion and Inversion Mode MISFETS", Inst. Phys. Conf. Ser. No. 65: Chapter 5, Paper-Int. Symp. GaAs and Related Compounds, Albuquerque, 1981, pp. 399-406.
J. Degani, et al., "Velocity Field Characteristics of Minority Carriers (Electrons) in p-InGaAs", Appl. Phys. Lett. 39(7), 1 Oct. 1981, pp. 569-572.
P. D. Gardner, et al., "GaInAs Metal Insulator Field-Effect Transistors (MISFETs) For Microwave Frequency Applications", RCA Review, vol. 42, Dec. 1981, pp. 542-556.
S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, Copyright 1981, p. 77, (Copyright 1969, p. 89).

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