Fast-switching pulse modulator

Details Fast-switching pulse modulator Fast-switching pulse modulator

1976-07-23

1978-09-19

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307318, 331107R, 333 11, H03K 501, H03K 100, H03K 3335

Patent

active

041157087

ABSTRACT:
A fast-switching pulse modulator for generating a high-power output pulse in response to a low-power input pulse to apply a bias signal to a microwave apparatus having a high efficiency avalanche semiconductor diode such as a TRAPATT diode or IMPATT diode formed of GaAs. The modulator uses a transistor operating in a switching mode. The transistor is biased to a non-conducting state preferably by a negative D.C. bias voltage and switched to a first conducting mode upon application of the positive input pulse to the transistor. At this first conducting mode the transistor switches current from zero to a low-current level during which no RF output signal exists. Upon application of a threshold signal to, for example, the TRAPATT diode, the diode is triggered into the TRAPATT mode generating thereby an RF output pulse. As the diode is triggered into the TRAPATT mode the transistor is switched to a second conducting mode at a high current level. The rise time of the RF output pulse is fast as a result of the transistor switching from the low-current level to the high-current level.

REFERENCES:
patent: 3743967 (1973-07-01), Fitzsimmons et al.

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