Fast switch-off circuit for conductivity modulated field effect

Details Fast switch-off circuit for conductivity modulated field effect Fast switch-off circuit for conductivity modulated field effect

1986-03-21

1987-06-30

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307300, 307304, 307246, 307450, 3072471, 357 43, H03K 17687, H03K 333, H03K 3353, H03K 1756

Patent

active

046773240

ABSTRACT:
A fast switch-off circuit for a conductivity modulated field effect transistor (COMFET) avoids the flow of destructive latch-up currents. A reduced-amplitude switch-off current is applied to the gate electrode of the COMFET during the initial portion of switch-off. When the source-to-drain voltage (V.sub.DS) of the COMFET has become larger than the range of low V.sub.DS voltage in which latch-up can occur for an increased-amplitude switch-off current being applied to the gate electrode of the COMFET, that increased-amplitude switch-off current is applied to the gate electrode of the COMFET.

REFERENCES:
patent: 4551643 (1985-11-01), Russell et al.
C. Frank Wheatley, Jr., and Gary M. Dolny, "COMFET--The Ultimate Power Device; A General Study of Power Devices", Solid State Technology, Nov. 1985, pp. 121-128.

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