Fast-sweep growth method for growing layers using liquid phase e

Details Fast-sweep growth method for growing layers using liquid phase e Fast-sweep growth method for growing layers using liquid phase e

1976-12-16

1979-03-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 427 87, H01L 21208

Patent

active

041429249

ABSTRACT:
A uniform and thin layer of a semiconductor is grown on a semiconductor substrate by an improved liquid phase epitaxy growth method. The growth solution is supercooled and is pushed rapidly over the substrate on which the layer of solute is grown. In GaAs the amount of supercooling is typically 3.degree. to 5.degree. C. and a constant thickness ultra-thin layer (about 0.18 microns) is grown on top of a GaAs substrate.

REFERENCES:
patent: 3950195 (1976-04-01), Rode et al.
patent: 3981764 (1976-09-01), Ito et al.

Affiliated with

Also associated with

Rating

Fast-sweep growth method for growing layers using liquid phase e does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fast-sweep growth method for growing layers using liquid phase e, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fast-sweep growth method for growing layers using liquid phase e will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-919899