Fast, stable overload recovery circuit and method

Details Fast, stable overload recovery circuit and method Fast, stable overload recovery circuit and method

2002-06-05

2004-03-09

Shingleton, Michael B (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including differential amplifier

C330S264000, C330S267000

Reexamination Certificate

active

06703900

ABSTRACT:

BACKGROUND OF THE INVENTION
The invention relates to high-speed CMOS operational amplifiers, and also to circuitry that reduces the amount of delay required for a high-speed CMOS operational amplifier to recover from a saturation condition.
U.S. Pat. Nos. 5,546,045, 4,622,521 and 4,714,896 disclose prior recovery circuits. U.S. Pat. No. 5,546,045 discloses a rail-to-rail bipolar class AB output stage.
It should be appreciated that until now, there have been very few commercially available high-speed CMOS operational amplifiers. This is because until very recently CMOS transistors that could be readily manufactured using reasonably low-cost CMOS integrated circuit manufacturing processes have had minimum channel length values that are not short enough (i.e., not less than about 0.7 microns) to allow CMOS operational amplifiers manufactured with such CMOS integrated circuit manufacturing processes to compete effectively with high-speed bipolar operational amplifiers manufactured using standard bipolar integrated circuit manufacturing processes. This is because the longer minimum channel lengths of the prior CMOS manufacturing processes result in large gate capacitances of all of the transistors, especially the pull-up transistors and pull-down transistors of the amplifier output stages. The large gate capacitances result in reduced circuit operating speeds compared to what has been achievable using conventional bipolar integrated circuit manufacturing processes. It is possible for operational amplifiers made with a typical CMOS manufacturing process to have operating speeds comparable to those of conventional bipolar integrated circuit operational amplifiers only if the minimum channel lengths for transistors made using that CMOS manufacturing process are sufficiently small (e.g., less than approximately 0.6 microns for a circuit designed for use with low power supply voltages, or as much as approximately 2.0 microns for a circuit designed for use with high power supply voltages).
In prior art CMOS operational amplifiers, if the output voltage responds to the input signal by increasing to a level close to the positive supply voltage, the input stage of the operational amplifier, which typically includes a differential input stage and a folded cascode stage that is connected to the gate of the P-channel pull-up transistor, causes the gate of the P-channel pull-up transistor to be pulled down to a level near the ground or negative supply voltage level in order to adequately turn on the P-channel pull-up transistor. Typically, there is a large capacitance coupled to the conductor connected to the gate of the P-channel pull-up transistor.
The large capacitance typically includes the gate capacitance of the pull-up transistor and the capacitance of the compensation capacitor of the operational amplifier. Consequently, if the input signal applied to the operational amplifier is rapidly decreased, the input stage of the operational amplifier needs to charge the gate voltage of the P-channel pull-up transistor to a high voltage nearly equal to the positive supply voltage before the P-channel pull-up transistor is turned off. The current supplied by the input stage of the operational amplifier to accomplish the charging up of the large capacitance coupled to and associated with the gate of the P-channel pull-up transistor is small, typically about 100 microamperes. Consequently, there is a substantial delay, referred to herein as an overload recovery delay, before the operational amplifier output voltage responds to the change in the input signal. The foregoing problem for the P-channel pull-up transistor is accompanied by an analogous overload recovery delay problem for the N-channel pull down transistor. The above described overload recovery delay problems have made CMOS operational amplifiers unsuitable for certain applications. The above described problems for CMOS operational amplifiers also apply directly to CMOS comparators and some other kinds of amplifiers.
For a long time there has been a need for an inexpensive, high-speed integrated circuit operational amplifier with rapid recovery from a saturation or overload condition. This need has not been satisfied by prior CMOS operational amplifiers. Similarly, the need for an inexpensive, high-speed integrated circuit comparator with rapid recovery from a saturation or overload condition has not been satisfied by prior CMOS comparators.
Commonly assigned U.S. Pat. No. 6,317,000 by the present inventors, issued Nov. 13, 2001 is incorporated herein by reference. U.S. Pat. No. 6,317,000 is directed to overcoming the foregoing problem of the prior art. However, the circuitry disclosed therein is slow and therefore unstable, and consequently more compensation capacitance than desirable is required to achieve stable operation. Therefore, the previous need for an inexpensive, high-speed integrated circuit amplifier, operational amplifier, comparator or the like has not been fully satisfied by the circuitry disclosed in our U.S. Pat. No. 6,317,000.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the invention to provide an inexpensive, high-speed, stable CMOS amplifier having rapid recovery from a saturation or overload condition.
It is another object of the invention to provide an inexpensive, high-speed, stable CMOS differential amplifier having rapid recovery from a saturation or overload condition.
It is another object of the invention to provide an inexpensive, high-speed, stable CMOS comparator having rapid recovery from a saturation or overload condition.
It is another object of the invention to provide an inexpensive, high-speed, stable CMOS differential amplifier which limits current supplied to a portion of the amplifier circuit, for example, a portion of a slew boost circuit in the differential amplifier circuit, during the same conditions wherein an output transistor of the differential amplifier is saturated.
It is another object of the invention to provide an inexpensive, high-speed, stable integrated circuit CMOS operational amplifier which competes effectively in the marketplace with bipolar integrated circuit operational amplifiers.
It is another object of the invention to provide an inexpensive, high-speed, stable integrated circuit CMOS comparator which competes effectively in the marketplace with bipolar integrated circuit comparators.
It is another object of the invention to provide an inexpensive, higher-speed, more stable integrated circuit CMOS amplifier, operational amplifier, or comparator having a simpler circuit configuration than those described in U.S. Pat. No. 6,317,000.
Briefly described, and in accordance with one embodiment thereof, the invention provides a difference amplifier that includes an input stage having an output terminal (
14
), an output stage (
100
) including an output transistor (M
11
) having a source coupled to a supply voltage (V
DD
), a gate coupled to the output terminal (
14
), and a drain coupled to an output conductor (
22
). An overload recovery circuit (
1
A) is coupled between the output conductor and the gate of the output transistor for limiting the voltage on the gate of the output transistor in response to the output voltage when the output voltage is within a predetermined range of the supply voltage. The overload recovery circuit includes a recovery transistor (M
4
) having a source coupled to the output conductor in one embodiment and to the supply voltage in another embodiment and a drain coupled to the gate of the output transistor. The overload recovery circuit includes an amplifier (
29
A) with a built-in offset having a first input coupled to the output conductor, a second input coupled to the supply voltage, and an output coupled to the gate of the recovery transistor.


REFERENCES:
patent: 4241313 (1980-12-01), Takehara
patent: 4352073 (1982-09-01), Leuthold
patent: 4622521 (1986-11-01), Redfern
patent: 4714896 (1987-12-01), Addis
patent: 5059922 (1991-10-01), Mahabadi
patent: 5204636 (1993-04-01), Werner, Jr. et al.
patent: 5311145 (1994-05-01), Huijsing et

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