Fast Si diodes and arrays with high quantum efficiency built...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S290000, C257S443000, C257S459000

Reexamination Certificate

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11102264

ABSTRACT:
Fast silicon diodes and arrays with high quantum efficiency built on dielectrically isolated wafers. A waveguide is formed in the top surface of the silicon that utilizes total internal reflection from the Si—Si Oxide interface to form an internal mirror. This mirror reflects incoming light into the waveguide cavity, with the light being trapped there by surrounding reflective interfaces. A masking layer may be used to define an input window. Individual diodes or linear arrays may be formed as desired. Some alternate embodiments are described.

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