Fast power diode

Details Fast power diode Fast power diode

1995-06-20

1998-05-05

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257610, 257617, 257656, H01L 29167, H01L 29207, H01L 29227, H01L 310288

Patent

active

057478724

ABSTRACT:
A fast power diode with a soft switching-time response for use in a commutating branch containing a switchable semiconductor component is formed by at least three successive diffusions with p and n dopants and the heavy metal platinum, and for final incorporation of the parameters necessary for operation, the diode is irradiated with electrons.

REFERENCES:
patent: 3888701 (1975-06-01), Tarneja et al.
patent: 3953243 (1976-04-01), Goetzberger et al.
patent: 4056408 (1977-11-01), Bartko et al.
patent: 5063428 (1991-11-01), Schlangenotto et al.
patent: 5119148 (1992-06-01), Anderson et al.
patent: 5360990 (1994-11-01), Swanson
patent: 5528058 (1996-06-01), Pike, Jr. et al.
patent: 5572048 (1996-11-01), Sugawara
Improved Switching Behaviour of Fast Power Diodes, W.D. Nowak, et al, AEG Research Laboratories, Frankfurt, West Germany.
Ultimate Limits of IGBT (MCT) for High Voltage Applications in conjuction with a Diode, A. Porst, Siemens AG, 81541, Munich, Germany.

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