Coherent light generators – Particular active media – Semiconductor
Patent
1984-12-19
1986-09-16
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, H01S 319
Patent
active
046126457
ABSTRACT:
The laser device of the present invention comprises: a semiconductor substrate; a first cladding layer of semiconductor formed on the substrate; an active layer of semiconductor formed on the first cladding layer, thereby forming a junction plane between the active layer and the first cladding layer; a second cladding layer of semiconductor formed on the active layer and a cap layer of semiconductor formed on the second cladding layer; the active layer having a lattice constant parallel to the junction plane sufficiently larger than the lattice constant normal to the junction plane so as to increase the optical gain of the TM mode relative to the optical gain of the normally operating TE mode, such that at a first injection current level, the laser device operates in the TM mode and at a second injection current level, the laser device operates in the TE mode. The laser output of the laser device of the present invention can be switched between a pure TM mode and a pure TE mode with nanosecond response time by varying injection current levels of the device.
REFERENCES:
patent: 4340966 (1982-07-01), Akiba et al.
patent: 4383319 (1983-05-01), Shimizu et al.
patent: 4546479 (1985-10-01), Ishikawa et al.
D. Akhmedov et al, "Effect of Internal Strain on the Polarization of the Emission in InP-InGaAsP Heterojunction Laser Structures", Sov. Tech. Phys. Lett., 6(6), Jun. 1980, pp. 304-305.
D. C. Craft et al, "Anomalous Polarization Characteristics of 1.3-.mu.m InGaAsP Buried Heterostructure Lasers", Appl. Phys. Lett., 44(9), 1 May 1984, pp. 823-825.
Chen Ying-Chih
Liu Jia-ming
Davie James W.
Finnegan Martha Ann
GTE Laboratories Incorporated
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