Fast P-I-N photodetector with high responsitivity

Details Fast P-I-N photodetector with high responsitivity Fast P-I-N photodetector with high responsitivity

2011-03-08

2011-03-08

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S401000, C257S428000, C257S436000, C257S448000, C257S458000, C257S465000, C257S466000, C257S656000, C977S749000, C977S763000, C977S932000, C136S251000, C427S074000

Reexamination Certificate

active

07902540

ABSTRACT:
A lateral p-i-n photodetector is provided that includes an array of vertical semiconductor nanowires of a first conductivity type that are grown over a semiconductor substrate also of the first conductivity type. Each vertically grown semiconductor nanowires of the first conductivity type is surrounded by a thick epitaxial intrinsic semiconductor film. The gap between the now formed vertically grown semiconductor nanowires-intrinsic semiconductor film columns (comprised of the semiconductor nanowire core surrounded by intrinsic semiconductor film) is then filled by forming an epitaxial semiconductor material of a second conductivity type which is different from the first conductivity type. In a preferred embodiment, the vertically grown semiconductor nanowires of the first conductivity type are n+ silicon nanowires, the intrinsic epitaxial semiconductor layer is comprised of intrinsic epitaxial silicon, and the epitaxial semiconductor material of the second conductivity type is comprised of p+ silicon.

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