Fast isolation diffusion

Details Fast isolation diffusion Fast isolation diffusion

1980-08-25

1982-04-20

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29576W, 148 15, 148187, 156628, 156643, 156622, H01L 21263, H01L 21302

Patent

active

043251820

ABSTRACT:
A method for forming low stress recesses in bodies of semiconductor material involves damaging the body either thermally or mechanically in the area where the recess is to be formed followed by etching in either a plasma or chemical medium to remove the damaged body portion leaving a relatively stress-free slot or other recess. Such recesses are utilized as diffusion sites for rapid formation of diffusion regions through semiconductor wafers and for the subdivision of wafers into discrete devices.

REFERENCES:
patent: 3579815 (1971-05-01), Gentry
patent: 3586547 (1971-06-01), Glendinning et al.
patent: 3615956 (1971-10-01), Irving et al.
patent: 3795557 (1974-03-01), Jacob
patent: 3852876 (1974-12-01), Sheldon et al.
patent: 4137100 (1979-01-01), Zaleckas
patent: 4256514 (1981-03-01), Pogge
patent: 4257827 (1981-03-01), Schwuttke et al.
patent: 4274909 (1980-03-01), Venkataraman et al.

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