Fast high voltage NMOS pass gate for integrated circuit with hig

Details Fast high voltage NMOS pass gate for integrated circuit with hig Fast high voltage NMOS pass gate for integrated circuit with hig

1997-08-19

1999-08-17

Tran, Toan

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327434, 327589, H03K 1716

Patent

active

059399287

ABSTRACT:
In a high voltage pass gate suitable for use as a block decoder in a flash memory circuit, the boosting of the block decoder's internal nodes is performed using coupling capacitors and boost transistors which are decoupled from the high capacitance pass gate node. The block decoder uses three internal block decoder nodes. Each of the three nodes is held to ground by a corresponding discharge transistor when the block is unselected. Each of the three nodes of a selected block is discharged to a normal supply voltage by a corresponding diode-connected regulation transistor when the high voltage supply is turned off after a programming operation has finished. Each of the three nodes has a separate coupling capacitor associated with it. One of the nodes is connected to the gates of the high voltage pass transistors, this node has high capacitance. The remaining two nodes have relatively small coupling capacitors. These other two nodes are capacitively coupling during opposite phases of a clock, and one of them controls a boost transistor which charges the high capacitance pass gate node. Two embodiments are presented, one having one less transistor than the other.

REFERENCES:
patent: 5369320 (1994-11-01), Satani et al.
patent: 5757228 (1998-05-01), Furutani et al.
patent: 5812015 (1998-09-01), Tobita
patent: 5831470 (1998-11-01), Park et al.

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