Fast flush structure for solid-state image sensors

Details Fast flush structure for solid-state image sensors Fast flush structure for solid-state image sensors

2005-02-07

2009-02-17

Vu, Ngoc-Yen T (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S294000, C348S299000, C348S311000, C257S223000, C257S230000, C257S445000, C257S448000

Reexamination Certificate

active

07492404

ABSTRACT:
An image sensor includes a substrate; a plurality of pixels on the substrate, one or more of the pixels comprises (i) first and second charge-storage regions having at least one photosensitive area; (ii) a lateral overflow drain; (iii) a first lateral overflow gate adjacent the first charge-storage regions that passes substantially all charges from the first charge-storage region to the lateral overflow drain; and (iv) a second lateral gate adjacent the second charge-storage region that passes excess photo-generated charge into the lateral overflow drain for blooming control.

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