Static information storage and retrieval – Floating gate – Particular connection
Patent
1995-02-23
1996-10-08
Yoo, Do Hyun
Static information storage and retrieval
Floating gate
Particular connection
36518514, 36518523, G11C 700
Patent
active
055638236
ABSTRACT:
A circuit for speeding up the pre-programming of floating gate storage transistors such as FLASH EPROMS, and particularly speeding up the pre-programming of a block or array of floating gate storage transistors includes a controllable voltage source that supplies gate programming potential across the control gate and source of the FLASH EPROM transistor cells to be programmed. A control circuit is provided that controls the voltage source to vary the gate programming potential during a programming interval as a function of time in order to decrease the time required for a given amount of charge movement to program the selected floating gate transistors. The wordline voltages are varied, while the source voltage is held constant. By starting at a lower wordline voltage, and increasing during the programming interval to a high wordline voltage, the programming speed is increased, and the high final turn-on threshold voltage for the programmed floating gate storage transistors is achieved. In addition, in order to speed up pre-programming, a programming potential is applied to four wordlines in parallel during a single programming interval. Further, the load on cells being programmed is adjusted to improve programming speed.
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Advanced Micro Devices, Advance Information: Am28F020 262,144 .times.8-Bit CMOS Flash Memory; Mar. 1991.
Hsiao Ling-Wen
Lin Tien-Ler
Shone Fuchia
Wan Ray L.
Yiu Tom D.
Macronix International Co. Ltd.
Yoo Do Hyun
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