Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-01-04
2005-01-04
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000
Reexamination Certificate
active
06838387
ABSTRACT:
Plasma reactor and process for very fast etching of silicon or epoxy resins in which a wafer is placed on a pedestal in a chamber, gas is exhausted from the chamber through a pressure regulation valve, a gas containing fluorine and/or oxygen is introduced into chamber through a showerhead electrode which is positioned substantially parallel to and less than 6 mm from the pedestal, RF power is applied to the pedestal and/or the showerhead electrode, and the pressure inside the chamber is maintained at a level greater than 1.5 Torr.
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Savas Stephen Edward
Zajac John
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