1991-01-17
1992-06-02
James, Andrew J.
357 20, 357 58, 357 88, 357 89, H01L 2992, H01L 2906, H01L 2912
Patent
active
051191482
ABSTRACT:
An improved damper diode is obtained by replacing the usual step junction (P.sup.+ -Nu-N.sup.+) structure of the prior art with an epitaxial double sided Pi-Nu structure (i.e., P.sup.+ -Pi-Nu-N.sup.+) in which the thickness and impurity concentrations of the Pi and Nu regions are substantially equal and have a combined thickness about equal to the prior art Nu region for the same voltage. Improved transient response (TFR), better transient energy absorption capability (UIS) and lower forward transient turn-on peak over-shoot voltage (TOPO) is obtained for the same or higher reverse breakdown voltage (BVR), in the same or smaller die size.
REFERENCES:
patent: 3916427 (1975-10-01), Ying et al.
patent: 3945028 (1976-03-01), Krishna et al.
patent: 4274103 (1981-06-01), Yamamoto et al.
patent: 4587547 (1986-05-01), Amemiya et al.
patent: 4605948 (1986-08-01), Martinelli
Anderson Samuel J.
Simpson William C.
Sullivan Daniel J.
Barbee Joe E.
Handy Robert M.
James Andrew J.
Motorola Inc.
Ngo Ngan Van
LandOfFree
Fast damper diode and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fast damper diode and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fast damper diode and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2232734