Fast cycle time-low latency dynamic random access memories and s

Static information storage and retrieval – Addressing – Plural blocks or banks

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36523006, 365203, 365207, G11C 700, G11C 702, G11C 800

Patent

active

056361742

ABSTRACT:
A memory 200 comprising a plurality of rows and columns of memory cells, each column of cells associated with a conductive bitline 301. Memory 200 further includes precharge circuitry 204, 206 for precharging a selected one of the bitlines in response to a received control bit.

REFERENCES:
patent: 5214610 (1993-05-01), Houston
patent: 5319755 (1994-06-01), Farmwald et al.
patent: 5323350 (1994-06-01), McLaury
patent: 5408129 (1995-04-01), Farmwald et al.
patent: 5430676 (1995-07-01), Ware et al.
patent: 5434817 (1995-07-01), Ware et al.
patent: 5493535 (1996-02-01), Cho
patent: 5495444 (1996-02-01), Okubo et al.
patent: 5528552 (1996-06-01), Kamisaki

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fast cycle time-low latency dynamic random access memories and s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fast cycle time-low latency dynamic random access memories and s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fast cycle time-low latency dynamic random access memories and s will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-396821

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.