Fast channel single phase buried channel CCD

Details Fast channel single phase buried channel CCD Fast channel single phase buried channel CCD

1985-02-25

1988-02-16

Munson, Gene M.

357 59, 357 71, H01L 2978, H01L 2904, H01L 2962

Patent

active

047258721

ABSTRACT:
A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and the pinned regions in order that the potential profile underlying said pinned regions may be more readily maintained. Extension of that high conductivity layer over the channel gate electrodes also facilitates the transmission of clocking voltages to the channel gate electrodes and allows the device to operate with decreased power losses.

REFERENCES:
patent: 4110777 (1980-10-01), Esser et al.
patent: 4229752 (1980-10-01), Hynecek
patent: 4276557 (1981-06-01), Levinstein et al.
patent: 4356040 (1982-10-01), Fu et al.
patent: 4374700 (1983-02-01), Scott et al.
patent: 4384301 (1983-05-01), Tasch et al.

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