Fast channel single phase buried channel CCD

Fishing – trapping – and vermin destroying

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437 30, 437 53, 437 70, H01L 2978, H01L 2980, H01L 2956, H01L, H01L

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active

049065840

ABSTRACT:
A single phase, buried channel charge coupled device has a high conductivity layer overlying the pinned regions thereof and extending to the channel stop regions, thereby facilitating the transfer of charge carriers between the channel stop regions and the pinned regions in order that the potential profile underlying said pinned regions may be more readily maintained. Extension of that high conductivity layer over the channel gate electrodes also facilitates the transmission of clocking voltages to the channel gate electrodes and allows the device to operate with decreased power losses.

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patent: 4779124 (1988-10-01), Hynecek
J. Hynecek, "Virtual Phase CCD Technology", Proc. 1979 Int'l Elec Device Meeting, Wash. D.C., Dec. 1979, pp. 611-614.
"Virtual Phase Technology: A New Approach to Fabrication of Large-Area CCD's", IEEE Trans. on Electron Devices, ED-28 (1981), pp. 483-489.
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Walden et al., Bell System Technical Journal, Sep. 1972, pp. 1635-1640.
EL-Sissi et al., IEEE Trans. on Electron Devices, vol. ED-21, No. 7, Jul. 1974, pp. 437-447.
Hobson, Charge-Transfer Devices, John Wiley & Sons, New York, 1978, pp. 20-23.
Sequin et al., Charge Transfer Devices, Academic Press, New York, 1975, pp. 39-41.
Melen et al., IEEE J. Solid-State Circuits, Feb. 1972, pp. 92-93.

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