Fast bipolar transistor for integrated circuit structure and met

Details Fast bipolar transistor for integrated circuit structure and met Fast bipolar transistor for integrated circuit structure and met

1985-06-21

1987-07-28

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29576B, 29576W, 148DIG11, 148DIG19, 148 15, 156643, H01L 2128

Patent

active

046824090

ABSTRACT:
An improved bipolar device is disclosed having a polysilicon emitter formed over a base region of a silicon substrate with oxide spacer portions formed on the sides of the emitter and metal silicide portions formed over the base region adjacent the oxide spacers whereby the use of polysilicon for the emitter results in high gain as well as vertical shrinking of the device because of the shallow diffusion of the emitter into the base and the elimination of an extrinsic base region. The use of oxide spacers and metal silicide adjacent the spacers results in a shrinkage of the horizontal spacing of the device to lower the base-emitter resistance and capacitance to thereby increase the speed of the device.

REFERENCES:
patent: 4259680 (1981-03-01), Lepselter et al.
patent: 4486942 (1984-12-01), Hirao

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